SOI silicon wafer based non-refrigerating infrared sensor and its array and production method |
Title： |
| SOI silicon wafer based non-refrigerating infrared sensor and its array and production method |
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Application Number： |
200710098513 |
Application Date： |
2007/04/19 |
Announcement Date： |
2007/11/28 |
Pub. Date： |
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Publication Number： |
101078652 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[] |
IPC： |
G01J 5/20H01L 27/146H01L 21/84 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Wang Zheyao, Zhang Qi, Pan Liyang, Liu Litian |
Key Words： |
silicon wafer, SOI, non-refrigerating, infrared sensor, array |
Abstract： |
The invention discloses a no-refrigeration infrared sensor manufactured by the combination of IC machining technology and micro machining technology and the array. Said sensor is made of SOI silicon wafer. Infrared sensing component is diode or MOSFET made of single crystal silicon. The infrared sensing component is located on single crystal silicon of component layer of SOI silicon wafer. Silicon substrate under the single crystal silicon and SOI silicon dioxide insulation layer is removed in etching by micro machining technology. It is connected with other parts by support arm so that the infrared sensing component is suspended. The invention adopts dioxide or MOSFET as infrared sensing component to measure infrared signal. It is provided with higher measuring sensitivity and lower 1/f noise. It makes use of SOI silicon wafer and etching technology to make infrared sensing component hang so that heat dissipation in measuring process can be decreased. It is provided with simple machining process and high finished product rate. |
Claim： |
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Priority： |
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PCT： |
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