Method for manufacturing piezoresistance type microcantilever beam sensor on SOI silicon sheet
Title：
Method for manufacturing piezoresistance type microcantilever beam sensor on SOI silicon sheet
Application Number：
 200610165089
Application Date：
 2006/12/13
Announcement Date：
 2007/05/30
Pub. Date：
Publication Number：
 1970434
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 B81C 1/00
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Wang Zheyao, Zhou Youzheng, Liu Litian
Key Words：
 SOI silicon sheet, piezoresistance type, microcantilever beam, sensor
Abstract：
 It relates to a compression resistance micro suspension arm beam sensor on the SOI silicon chip. It features in single crystalline silicon compression resistance sensitive components on the SOI silicon upper layer, using horizontal dry corroding to release the said micro suspension arm beam in suspension from the front. It is simple in process, high in product finish rate, big in compression resistance coefficient, with sensitivity of the sensor significantly improved.
Claim：
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PCT：
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  Selected patents owned by Tsinghua University filed in 2005 are loaded.
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