Film transistor with non-continuous conducting film
Title：
Film transistor with non-continuous conducting film
Application Number：
 200610114425
Application Date：
 2006/11/10
Announcement Date：
 2007/04/18
Pub. Date：
Publication Number：
 1949542
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 29/786
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Li Dejie
Key Words：
 non-continuous, conducting film, film transistor
Abstract：
 The invention is a thin film transistor with uncontinuous conductive film, comprising substrate, grid on the substrate, insulating layer, semiconductor layer on the insulating layer and source and drain separately arranged on the semiconductor, characterized in that a layer of uncontinuous island conductive film is arranged between the source and drain and can be arranged on the semiconductor layer and between the insulating layer and semiconductor layer. Thus, the thin film transistor current can be increased by above 6 times and the device preparing process and structure are simple, only adding a layer of conductive film. And it can be used in flat panel displays, sensors and multiple other electronic devices requiring heavy current.
Claim：
Priority：
PCT：
LegalStatus：

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