Transistor based on schottky siGe heterojunction |
Title： |
| Transistor based on schottky siGe heterojunction |
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Application Number： |
200610114582 |
Application Date： |
2006/11/16 |
Announcement Date： |
2007/04/18 |
Pub. Date： |
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Publication Number： |
1949534 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 29/737 |
Applicant(s)： |
Tsinghua Univ. |
Inventor(s)： |
Liu Daoguang, Yan Liren, Zhou Wei, Xu Jun, Xu Shiliu |
Key Words： |
schottky siGe, heterojunction, transistor |
Abstract： |
The invention discloses a Schottky SiGe heterojunction-based transistor, on the basis of SBD structured transistor structure, replacing the P junction of the SBD transistor with the SiGe heterojunction to form a N+, N+-BL, N, P+SiGe, and N+poly-Si structured Schottky SiGe heterojunction transistor, where P+SiGe layer is under E pole and on N layer and P+SiGe and N connect with B pole. And the E pole is made from N+poly-Si material. And it can compose SiGe heterojunction-based STTL circuit, thus able to largely increase circuit speed. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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