Circuit switch for semi digital filtering
Title:
Circuit switch for semi digital filtering
Application Number:
200710064941
Application Date:
2007/03/30
Announcement Date:
2007/10/10
Pub. Date:
Publication Number:
101051833
Announcement Number:
Grant Date:
Granted Pub. Date:
ApplicationType:
Invention
State/Country:
11[China|beijing]
IPC:
H03K 17/687H03H 17/00
Applicant(s):
Tsinghua Univ.
Inventor(s):
Liu Liyuan, Chen Run, Li Dongmei
Key Words:
Circuit switch, semi digital, filtering
Abstract:

The disclosed circuit switch includes following parts: current source in use for providing current for the circuit switch; being in use for controlling on/off of current, a pair of complementation switch is composed of a N type (or P type) metallic oxide semiconductor field effect tube (MOSEFT), and a P type (or N type) MOSEFT; being in use for converting current to voltage, and filtering signal, the transresistance amplifier is composed of a first capacitance, a resistance, and a operational amplifier; being in use for filtering out signal overshooting inducted by control signal, the lowpass filter is composed of a second capacitance and P type MOSEFT. Comparing with traditional circuit switch, the disclosed circuit switch can restrains signal overshoot more effectively. Features are: added capacitance does not require high linearity and is realizable by MOSEFT. Under deep submicro technique, MOSEFT can realize larger capacitance with smaller hardware cost.

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