Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof
Title：
Oxide based diluted magnetic semiconductor thin film with room temperature ferromagnetism and preparation method thereof
Application Number：
 200610112791
Application Date：
 2006/09/01
Announcement Date：
 2007/03/07
Pub. Date：
Publication Number：
 1924095
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 C23C 30/00, C23C 18/02
Applicant(s)：
 Tsinghua University
Inventor(s)：
Key Words：
 Oxide based, semiconductor thin film,ferromagnetism
Abstract：
 The invention discloses an oxide base rare magnetic conductive film and preparing method with indoor temperature magnet in the material scientific domain, which is characterized by the following: displaying the component as LixNi1-x-yMyO (o<=x<=0.1; o
Claim：
Priority：
PCT：
LegalStatus：

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