High-speed and highly anti-radiation ferroelectric storage based on strain SiGe channel
Title：
High-speed and highly anti-radiation ferroelectric storage based on strain SiGe channel
Application Number：
 200610075925
Application Date：
 2006/04/24
Announcement Date：
 2007/02/28
Pub. Date：
Publication Number：
 1921005
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 G11C 11/22, H01L 27/115, H01L 29/78
Applicant(s)：
 No.24 Research Institute of CETC
Inventor(s)：
 Liu Daoguang, Ren Tianling, Xie Dan, Xu Jun, Liu Litian, Chen Hongyi, Xu Shiliu
Key Words：
 High-speed, highly anti-radiation, ferroelectric storage, strain SiGe channel
Abstract：
 The invention relates to a high-speed high-anti-radiation ferroelectric memory, based on strain SiGe groove, wherein the unit structure of memory is formed by using M1 tube to serially connect ferroelectric capacitor Cf1 and using M2 to serially connect ferroelectric capacitor Cf2; then connecting two capacitors to connect the driving line PL; the grids of M1 and M2 are serially connected to connect the word line WL; the sources or drains of M1 and M2 are connected to the bit line BL and bit line BLB; BL, BLB are connected to the sensitivity amplifier SA; M1 and M2 are N-MOS tubes. The invention uses strain SiGe as the groove of P-MOS tube, to improve the cavity transfer rate of groove, improve the working speed of P-MOS tube, to match the speed of N-MOS. Therefore, the inventive ferroelectric memory has low power consumption, high-speed storage, and high safety.
Claim：
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PCT：
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