Macro length based oxide layer cladded copper nano wire photo conductive sensor |
Title： |
| Macro length based oxide layer cladded copper nano wire photo conductive sensor |
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Application Number： |
200710064946 |
Application Date： |
2007/03/30 |
Announcement Date： |
2007/08/29 |
Pub. Date： |
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Publication Number： |
101026197 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 31/102H01L 31/032H01G 9/20G01J 1/42 |
Applicant(s)： |
Tsinghua Univ. |
Inventor(s)： |
Sun Jialin, Zhu Jialin, Xu Jia, Guo Jihua |
Key Words： |
Macro length, oxide layer, photo conductive sensor |
Abstract： |
This invention relates to a photoconduction sensor device of a macro long copper nm wire cluster with a cuprous oxide package layer, which utilizes silver glue to connect two ends of a macro long copper nm wire cluster with two metal electrodes to form a circuit then to send suitable current through it to oxidate the copper nm wire in air to form a copper oxide package layer, then packages the processed nm wire cluster and an electrode end connected to it in a vacuum quartz sleeve and leaves the other end out of the sleeve as a lead, when working, the electrode lead is connected with an electric signal test device, when a beam irradiates on the central position of the cluster, the conductance in the circuit will be changed greatly, when light strength is increased, the photoconduction value will be increased, on the contrary, when the light strength is reduced, the photoconduction value will be reduced and its photoelectric response speed is very fast. |
Claim： |
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Priority： |
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PCT： |
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