Thin film transistor controlled thin film field emission display device
Title:
Thin film transistor controlled thin film field emission display device
Application Number:
200610089621
Application Date:
2006/07/07
Announcement Date:
2006/12/27
Pub. Date:
Publication Number:
1885483
Announcement Number:
Grant Date:
Granted Pub. Date:
ApplicationType:
Invention
State/Country:
11[China|beijing]
IPC:
H01J 31/12, H01J 29/00, H01J 29/02, H01J 29/04, H01J 29/46, H01J 29/96
Applicant(s):
Tsinghua University
Inventor(s):
Li Dejie
Key Words:
Thin film transistor controlled, thin film field, emission display
Abstract:
The related TFT-control thin-film field-emissive display (TFFED) comprises: a ground electrode on the cathode plate paralleled to the column electrodes, as well as a tripolar TFT connected to a bipolar TFFE cathode with an electron injection/extraction electrode and an electron conductive emission layer between electrodes, which composes by a grid/drain/source connected to a row/column/ground electrode respectively, an insulation layer between the grid plane and the plane with drain and source, and a semi-conductive thin-film. This invention overcomes the problem of large current in prior art, reduces process time, and fit to large-scale production.
Claim:
Priority:
PCT:
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