Method for quick extraction of silicon integrated circuit substrate coupling parameters under multiple frequency points
Title：
Method for quick extraction of silicon integrated circuit substrate coupling parameters under multiple frequency points
Application Number：
 200610012140
Application Date：
 2006/06/07
Announcement Date：
 2006/12/27
Pub. Date：
Publication Number：
 1885294
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 G06F 17/50
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Wang Xiren, Yu Wenjian, Wang Zeyi
Key Words：
 quick extraction, silicon integrated circuit substrate,coupling parameters,multiple frequency points
Abstract：
 The invention relates to a liner multi frequency point integrated coupled parameter extracting method, belonging to IC-CAD technique, wherein said method is characterized in that: based on the similarity between liner coupled capacitor extraction and integrated parameter extraction, providing the extraction method of integrated coupled parameter at any frequency, which comprises: first, extracting the coupled capacitor parameter; second, correcting capacitor into integrated coupled parameter at said frequency. When using said method to calculate the coupled parameter at multi frequency points, the capacitor parameter extraction only needs to be operated one time; and the correction from capacitor to integrated parameter is only processed one time at each frequency point. And the invention has high efficiency and high accuracy.
Claim：
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PCT：
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