Copper-indium-galliun-selenium film solar cell and its preparation method
Title：
Copper-indium-galliun-selenium film solar cell and its preparation method
Application Number：
 02104073
Application Date：
 2002/03/08
Announcement Date：
 2002/09/04
Pub. Date：
Publication Number：
 1367536
Announcement Number：
 1151560
Grant Date：
 2004-5-26
Granted Pub. Date：
 2004-5-26
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 31/0224, H01L 31/0232, H01L 31/04, H01L 31/18
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Zhuang Daming, Zhang Gong, Fang Ling
Key Words：
 Copper-indium-galliun-selenium, film solar cell, preparation method
Abstract：
 A film solar battery with copper, indium, gallium selenium and its parparing method relates to semiconductor film preparation and structure design of semiconductor film device. It has the characteristics as using n-ZnS as a window layer, CuIn GaSe P-semiconductor film as an absorption layer and to form ZnS/Cu (In,Ga) Sezp-n junction with ZnS, of which metal back electrode is Mo-Cu alloy. In present invention. ZnS has been used as a window layer of film solar battery to replace ZnO material so as to increase absorption spectral region of sun light at absorption layer and to avoid the application of hazardous material of Cd, furthermore Mo-Cu alloy has been used as a back electrode to replace Mo for making joint between battery and backing more solid to raise the yield of battery production.
Claim：
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PCT：
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