Process for treating substrate of epitaxial chip for high-brightness gallium nitride-base LED |
Title： |
| Process for treating substrate of epitaxial chip for high-brightness gallium nitride-base LED |
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Application Number： |
02117329 |
Application Date： |
2002/05/17 |
Announcement Date： |
2002/11/13 |
Pub. Date： |
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Publication Number： |
1379484 |
Announcement Number： |
1167140 |
Grant Date： |
2004-9-15 |
Granted Pub. Date： |
2004-9-15 |
ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 33/00 |
Applicant(s)： |
Tsinghua Univ |
Inventor(s)： |
Luo Yi, Guo Wenping, Hu Hui |
Key Words： |
treating process, substrate, epitaxial chip, high-brightness, gallium nitride-base, LED |
Abstract： |
A processing method for substrate of an epitaxial plate of a high-luminance gallium nitride base LED (light emitting diode) is characterized for external growing by that the substrate surface of sapphire awaiting epilocial growth is etched in to many small plots of slots whose width is 0.001-1000 micron, depth is 0.001-300 micron, and spacing is 0.01-10000 micron. An alternative method is first to deposit a film on the surface of sapphire awaiting epitaxial growth and them etching the film into many small blots of slots whose depth reaches the substrate surface of sapphire, width is 0.01-10000 micron, and spacing is 0.01-10000 micron therefore so as to greatly reduce the stress accumulation between the epitaxial layer and the substrate in the period of epitaxial growing to get high-luminance and good-homogeneity LED. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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