Room temperature luminous silicon base Fabry-Perot (F-P) microcavity device |
Title： |
| Room temperature luminous silicon base Fabry-Perot (F-P) microcavity device |
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Application Number： |
02117423 |
Application Date： |
2002/04/19 |
Announcement Date： |
2002/11/06 |
Pub. Date： |
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Publication Number： |
1378091 |
Announcement Number： |
1162734 |
Grant Date： |
2004-8-18 |
Granted Pub. Date： |
2004-8-18 |
ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
G02B 1/00, G02F 1/01,G02F 1/35 |
Applicant(s)： |
Tsinghua Univ. |
Inventor(s)： |
Yue Ruifeng, Wang Yan, Dan Yaping |
Key Words： |
Room temperature luminous, silicon base Fabry-Perot (F-P), microcavity device |
Abstract： |
The room temperature luminous silicon-base Fabry-Perot micro cavity device as one silicon-base optoelectronic device contains two a-Si:H/a-SiOxNy:H Bragg reflectors prepared through alternate growth of a-Si:H film and a-SiOxNy film; and one a-SiCx:H light emitting layer, where x and y express content, the a-SiOxNy:H may be a-SiO2 and x in a-SiCx:H may be in micro amount; and the substrate is Si substrate. All the a-Si:H, the a-SiOxNy:H and the a-SiCx:H are non-crystalline film material prepared through PECVD process. The said reactor has six layers of film in its top and seven layers of film in its bottom. Compared with available room temperature luminous silicon-base optoelectronic device, the device of the present invention has the advantages of adjustable luminou s wavelength, easy manufacture, low cost and comdpatible with conventional microelectronic process. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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