Flash memory cell and its preparing process |
Title： |
| Flash memory cell and its preparing process |
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Application Number： |
02123441 |
Application Date： |
2002/06/28 |
Announcement Date： |
2002/12/25 |
Pub. Date： |
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Publication Number： |
1387263 |
Announcement Number： |
1176493 |
Grant Date： |
2004-11-17 |
Granted Pub. Date： |
2004-11-17 |
ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 21/8239, H01L 21/8246, H01L 27/10, H01L 27/112 |
Applicant(s)： |
Tsinghua Univ |
Inventor(s)： |
Pan Liyang, Zhu Jun |
Key Words： |
Flash memory cell, preparing process |
Abstract： |
The flash storage unit includes a semi-conductor substrate of P type and P pit in the said substrate a includes a semi-conductor substrate of P type and P pit in the said substrate, a tunnelling the oxidation layer on the semi-conductor substrate, a stacked grid structure including floating grid and control grid of which floating grid is isolated to the control grid through the composite media layer of silica/silicon nitride/silica, on the tunnelling thin oxidation layer; a source region consisting of a n(-) source region injected by low concentration phosphorus and prolongated below the floating grid as well as a n(-) source region injected by high concentration arsenic, it the substrate of the first edge of the said stacked grid structure, a drain regino consisting of a n(-) drain regino injected by low concentration phosphorus. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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