Nd-doped Bi4Ti3O12 ferroelectric thin film for the ferroelectric memory and its low temperature preparation method |
Title： |
| Nd-doped Bi4Ti3O12 ferroelectric thin film for the ferroelectric memory and its low temperature preparation method |
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Application Number： |
200710063820 |
Application Date： |
2007/02/12 |
Announcement Date： |
2007/08/15 |
Pub. Date： |
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Publication Number： |
101017829 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 27/115H01L 21/314H01L 21/8247G11C 11/22H01B 3/02C01G 23/00 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Xie Dan, Ren Tianling, Xue Kanhao, Liu Tianzhi, Zhang Zhigang, Liu Litian |
Key Words： |
Nd-doped Bi4Ti3O12, ferroelectric memory, low temperature, preparation |
Abstract： |
The chemical formula Bi4-xNdxTi3O12 relates to the 20-500nm Nd-doped bismuth titanate ferro-electricity thin film, wherein, x denotes the mole percent of Nd in total mole number of Nd and Bi, while the surplus content of Bi element takes up of 5-20% as the total mole number of Bi, Nd and Ti. The preparation method comprises preparing predecessor sol and preparing the thin film, respectively. This product has super anti-fatigue property, high Pr value, lower Vc value, and compatible with CMOS technology. |
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