Array type optical probe scanning IC photoetching method
Title:
Array type optical probe scanning IC photoetching method
Application Number:
01120598
Application Date:
2001/07/26
Announcement Date:
2002/01/30
Pub. Date:
2004/03/10
Publication Number:
1333553
Announcement Number:
1141733
Grant Date:
Granted Pub. Date:
2004-3-10
ApplicationType:
Invention
State/Country:
11[China|beijing]
IPC:
B81C 5/00, G03F 7/00, H01L 21/027
Applicant(s):
Qinghua Univ.
Inventor(s):
Xu Duanyi, Qi Gousheng, Fan Xiaodong
Key Words:
Array type, optical probe scanning, IC, photoetching method
Abstract:
The present invention belongs to the field of microfine engineering manufacture technology, and is characterizedb by that a kind of array optical probe scanning photoetching process is used to make integrated circuit so as to can make mininum wire width of integrated circuit less than 0.1 micrometer, at the same time it features quick speed and high efficiency. It can greatly simplify production process of integrated circuit, and provides a new effective pathway for making super-large-scale integrated circuit.
Claim:
Priority:
PCT:
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