A method for obtaining low bit discrepancy density extension thin film via using neck down extension |
Title： |
| A method for obtaining low bit discrepancy density extension thin film via using neck down extension |
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Application Number： |
200710176856 |
Application Date： |
2007/11/06 |
Announcement Date： |
2008/03/26 |
Pub. Date： |
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Publication Number： |
101150054 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 21/20 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Zhao Shuo, Liang Renrong, Liu Jialei, Wang Jing, Xu Yang, Liu Zhihong, Xu Jun |
Key Words： |
low bit discrepancy density, extension thin film, neck down extension |
Abstract： |
This invention discloses a method for using necking extension to get extension films of low dislocation density, which utilizes deposition, selective extension and thermal oxidation to prepare GeSi substrates of low dislocation density and channels of high migration rate and gets films of exremely low dislocation density on a silicon wafer meeting the requirement of MOS devices or luminescent devices. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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