Silicon-based ferroelectric sandwich structure for electronic element and device and its manufacture
Title：
Silicon-based ferroelectric sandwich structure for electronic element and device and its manufacture
Application Number：
 00105549
Application Date：
 2000/03/31
Announcement Date：
 2000/09/27
Pub. Date：
Publication Number：
 1267918
Announcement Number：
 1119837
Grant Date：
Granted Pub. Date：
 2003-8-27
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 C04B 35/01, C04B 35/622, H01L 41/16, H01L 41/22
Applicant(s)：
 Qinghua Univ.
Inventor(s)：
 Ren Tianling, Zhang Lintao, Liu Litian
Key Words：
 Silicon-based, ferroelectric sandwich structure, electronic element and device, manufacture
Abstract：
 Precursor PZT sol and PT sol are first prepared. On one substrate of monocrystal silicon, one metal Pt/Ti layer as base electrode is formed through sputtering and one layer of PT sol, one layer of PZT sol and one layer of positive glue are painted successively. After photoetching, one layer of metal Pt/Ti is formed through sputtering, the positive glue is stripped to form the top electrode, and thus a sandwiched structure for electronic element is thus obtained. The method of the present invention can reduce the annealing temperature of ferroelectric film and thus raise the compatibility of the ferroelectric film preparing process and the microelectric process.
Claim：
Priority：
PCT：
LegalStatus：

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