Bismuth ferric/bismuth titanate laminated construction electric capacity and method for preparing the same |
Title： |
| Bismuth ferric/bismuth titanate laminated construction electric capacity and method for preparing the same |
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Application Number： |
200710175793 |
Application Date： |
2007/10/12 |
Announcement Date： |
2008/03/05 |
Pub. Date： |
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Publication Number： |
101136404 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 27/04, H01L 27/115, H01L 21/02, H01L 21/822, H01L 21/8247 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Xie Dan, Ren Tianling, Zang Yongyuan, Liu Litian |
Key Words： |
Bismuth ferric, bismuth titanate, laminated construction, electric capacity, preparing method |
Abstract： |
This invention relates to a BFO/BXT laminated capacitor and its preparing method, in which, the capacitor includes: a substrate made of silicon and orderly combined with an oxidation layer, a lower electrode metal layer, a BFO film and an upper metal layer, in which, a BXT induction film is set between the lower electrode metal layer and the BFO film. The method includes: preparation of sol of RFO and BXT precursors and preparation of the capacitor of its laminated structure and the ferroelectric capacitor prepared with this method includes excellent property of anti-fatigue, high residual polarized intensity, low operational voltage and better dielectric property. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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