ZnO thin membrane with large piezoelectric constant and high resistivity
Title：
ZnO thin membrane with large piezoelectric constant and high resistivity
Application Number：
 200710118646
Application Date：
 2007/07/11
Announcement Date：
 2008/01/23
Pub. Date：
Publication Number：
 101110463
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 41/18H03H 9/02
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Pan Feng, Wang Xubo, Zeng Fei, Yang Yuchao
Key Words：
 ZnO, thin membrane, piezoelectric constant, resistivity
Abstract：
 The present invention discloses a zinc oxide thin film with a high piezoelectric constant and specific resistance belonging to the technical field of new material prediction, which utilizes copper and nickel to mix with zinc oxide system to change its properties. After being mixed, preferred orientation of an axis c of the zinc oxide thin film is increased. Lattice parameters of the thin film are decreased. In addition, charge number of average equivalent atoms is increased, thus remarkably increasing piezoelectric performance compared with that before mixing. Empty energy state at layer 3d of divalent copper and nickel ions can capture free electrons in the thin film, thus bringing an effect of noticeably improving specific resistance of the thin film. At normal temperature, the zinc oxide thin film with changed properties through mixing shows outstanding piezoelectric characteristic and high specific resistance d33 (d33 more than 14pC/N) and (Rho more than 1,010 Omega is multiplied by cm).
Claim：
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PCT：
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