Method for developping directionally aligning carbon nanometer tube array on silicon substrate |
Title： |
| Method for developping directionally aligning carbon nanometer tube array on silicon substrate |
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Application Number： |
200410088424 |
Application Date： |
2004/11/02 |
Announcement Date： |
2006/05/10 |
Pub. Date： |
2007/06/20 |
Publication Number： |
1769546 |
Announcement Number： |
1322177 |
Grant Date： |
2007-6-20 |
Granted Pub. Date： |
2007-6-20 |
ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
C30B 25/02, C30B 29/02, C30B 29/62, C01B 31/02 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Zhang Zhengjun, Zhou Ya, Yue Yang |
Key Words： |
developping method, directionally, aligning, carbon nanometer tube array, silicon substrate |
Abstract： |
This invention discloses a directional straightening carbon namometer tube array that grows directly on the silicon fundus method, which belongs to the namometer material preparation technology field. This invention uses the chemical vapour deposition method and uses diluxuriant iron and xylenes as the material. When preparing, firstly putting the pure silicon fundus in the quartz vacuum tube stove to make the pressure in the stove under 40Pa and rise the stove temperature to the temperature that the carbon namometer tube needs. Then immitting the diluxuriant iron or xylenes with a certain chroma range in the stove tube, controlling the immitting velocity of the solution and adjusting the vacuum butterfly valve to make the pressure stabilize in a certain range. After reaction, the system starts lowering its temperature and keeps vacuumizing state until the system decreases to a certain temperature. This invention has an extensive applying foreground in the making of the namometer electron device and field launcher. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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