Method for developping directionally aligning zinc oxide nanometer rod array on silicon substrate |
Title： |
| Method for developping directionally aligning zinc oxide nanometer rod array on silicon substrate |
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Application Number： |
200410088422 |
Application Date： |
2004/11/02 |
Announcement Date： |
2006/05/10 |
Pub. Date： |
2007/08/22 |
Publication Number： |
1769545 |
Announcement Number： |
1333117 |
Grant Date： |
2007-8-22 |
Granted Pub. Date： |
2007-8-22 |
ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
C30B 25/02, C30B 29/16, H01L 21/365 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Zhang Zhengjun, Su Xin |
Key Words： |
developping method, directionally, aligning, zinc oxide, nanometer rod array, silicon substrate |
Abstract： |
This invention discloses a directional straightening zinc oxide namometer stick array that grows directly on the silicon fundus method, which belongs to the namometer material preparation technology field. This invention uses the chemical vapour deposition method and acetic acid zinc as the raw material. When preparing, fixing the silicon fundus planted with the zinc oxide film on the reaction container which has some acetic acid zinc, then placing the reaction container in the isothermal zone in the center of the tube type stove. Setting reaction temperature, then starting the tube stove to rise its temperature to the setted temperature and keeping a certain time, then obtaining the directional straightening zinc oxide namometer stick array that grows directly on the silicon fundus under the 250 ¡æ without using activator. This invention has a extensive foreground in the making of the namometer electron device and electron device. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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