Method for developping monocrystalline iron nanometer thread on silicon substrate
Title：
Method for developping monocrystalline iron nanometer thread on silicon substrate
Application Number：
 200410088423
Application Date：
 2004/11/02
Announcement Date：
 2006/05/10
Pub. Date：
 2007/04/25
Publication Number：
 1769544
Announcement Number：
 1312325
Grant Date：
 2007-4-25
Granted Pub. Date：
 2007-4-25
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 C30B 23/00, C30B 29/62, C23C 14/26
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Zhang Zhengjun, Pan Chunyu
Key Words：
 developping method, monocrystalline, iron nanometer thread, silicon substrate
Abstract：
 This invention relates to a iron namometer production method on the silicon fundus, which belongs to the namometer material preparation technology field. The method is the directly vaporizing method, the material is the wires. When preparing, firsly putting the wires and pure silicon fundus in the vacuum bell cover, making the pressure of the bell cover under 10Pa. then electrifying and heating the wires to vaporize them, after several minutes, stopping electrifying, in this course keeping the vacuum degree with the pump. After reaction, keeping vacuum station until the wires and material cools naturally to avoid the material being oxygenated. The operation in this techonoly is simple, the time is short, and it has an extensive appliance foreground in the making of the high density storage material and activator.
Claim：
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PCT：
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