Nanometer silicon wire structure and its growth process |
Title: |
Nanometer silicon wire structure and its growth process |
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Application Number: |
200410051311 |
Application Date: |
2004/08/28 |
Announcement Date: |
2006/03/01 |
Pub. Date: |
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Publication Number: |
1740406 |
Announcement Number: |
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Grant Date: |
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Granted Pub. Date: |
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ApplicationType: |
Invention |
State/Country: |
11[China|beijing] |
IPC: |
C30B 25/00, C30B 29/06, C30B 29/62 |
Applicant(s): |
Tsinghua Univ. |
Inventor(s): |
Ge Shuaiping, Jiang Kaili, Fan Shoushan |
Key Words: |
Nanometer silicon, wire structure, growth process |
Abstract: |
The present invention provides nanometer silicon wire structure and its growth process and belongs to the field of nanometer wire technology. The nanometer silicon wire structure includes one silicon chip substrate and several nanometer silicon wires grown on the crystal face. The nanometer silicon wires are formed along the epitaxial <111> direction of the crystal face, and the crystal faces include crystal face (100), (110) and (111) and include epitaxial <111> direction. The growth process includes the following steps: forming one metal catalyst layer on crystal face of the silicon chip; setting the silicon chip inside quartz tube, and introducing silicon-containing reaction gas and hydrogen in the Si/H molar ratio of 0.05-0.4 to react at 500-1000 deg.c to deposit Si onto the inner wall of the quartz tube and to reach balance state gradually; and growing nanometer silicon wire on the crystal face of the silicon chip. The present invention may be used in nanometer optics, nanometer electronics and other fields. |
Claim: |
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Priority: |
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