Production for multi-layer thin-film structure of diamond sound surface wave device
Title:
Production for multi-layer thin-film structure of diamond sound surface wave device
Application Number:
200410096819
Application Date:
2004/12/07
Announcement Date:
2005/07/27
Pub. Date:
2006/04/19
Publication Number:
1645744
Announcement Number:
1252916
Grant Date:
2006-4-19
Granted Pub. Date:
2006-4-19
ApplicationType:
Invention
State/Country:
11[China|beijing]
IPC:
H03H 3/08
Applicant(s):
Qinghua Univ.
Inventor(s):
Pan Feng, Li Dongmei, Wang Xubo
Key Words:
Production, multi-layer thin-film structure, diamond, sound surface wave device
Abstract:
The method includes following steps: first the graphic of Surface Acoustic Wave (SAW) device is photo etched on diamond film surface; IIIA group element or VA group element are injected into the place of graphic by using ion implantation method; the polycrystal ZnO film is deposited on the diamond surface; finally the photoresist is removed, and the transducer graphic is obtained. Through injecting the ion, the surface resistivity is greatly reduced and conducting power is greatly increased.
Claim:
Priority:
PCT:
LegalStatus:

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