Producing method for metal thin-membrane of high-frequency sound surface wave device |
Title： |
| Producing method for metal thin-membrane of high-frequency sound surface wave device |
|
Application Number： |
200410097198 |
Application Date： |
2004/12/14 |
Announcement Date： |
2005/05/11 |
Pub. Date： |
|
Publication Number： |
1614884 |
Announcement Number： |
1238967 |
Grant Date： |
2006-1-25 |
Granted Pub. Date： |
2006-1-25 |
ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H03H 3/08 |
Applicant(s)： |
Tsinghua Univ. |
Inventor(s)： |
Pan Feng, Li Dongmei, Zeng Fei |
Key Words： |
Producing method, metal thin-membrane, high-frequency sound, surface wave, device |
Abstract： |
The method includes following steps: a transition layer of metal is deposited between piezoelectric crystal and metallic aluminium film. The transition layer of metal uses volatile chloride metals Zr, Nb and Ni. These metals have high melting point, low diffusion coefficient, and can inhibit Al atom migration. |
Claim： |
|
Priority： |
|
PCT： |
|
LegalStatus： |
|
Relevancy information
