Quantum dot memory based on longitudinal double barrier resonant tunneling structure
Title:
Quantum dot memory based on longitudinal double barrier resonant tunneling structure
Application Number:
200410091126
Application Date:
2004/11/19
Announcement Date:
2005/04/06
Pub. Date:
2006/12/20
Publication Number:
1604331
Announcement Number:
1291497
Grant Date:
2006-12-20
Granted Pub. Date:
2006-12-20
ApplicationType:
Invention
State/Country:
11[China|beijing]
IPC:
H01L 27/10
Applicant(s):
Tsinghua University
Inventor(s):
Deng Ning, Chen Peiyi, Pan Liyang
Key Words:
Quantum dot memory, longitudinal double barrier, resonant tunneling structure
Abstract:
This invention relates to a quantum spots memory based on longitudinal double-barrier resonance cross structure and belongs to semi-conductor device design field. The basic structure comprises the multiple structures, source and drain electrodes orderly grown in the Si underlay. It is characterized by the following: the multiple structures comprise control grating electrode, quantum float grating layer, double-barrier resonance cross layer and SiGe channel.
Claim:
Priority:
PCT:
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