Radio frequency band low temperature low noise amplifier |
Title： |
| Radio frequency band low temperature low noise amplifier |
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Application Number： |
200410074736 |
Application Date： |
2004/09/14 |
Announcement Date： |
2005/03/02 |
Pub. Date： |
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Publication Number： |
1588794 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H03F 1/26, H03F 3/189 |
Applicant(s)： |
Tsinghua Univ. |
Inventor(s)： |
Cao Bisong, Zhang Xiaoping, Wang Fan |
Key Words： |
Radio frequency band, low temperature, low noise, amplifier |
Abstract： |
This invention relates to RF range low-temp.l low-noise amplifier. According the connections of the feet of transistors, the types of the amplifier circuits are: input matching network, output matching network and negative feed-back network. This ivnented product can reduce noise of front part of the super-conduction receiver and to realize high sensitivity of the front part of the super-conduction receiver. It has advantages of small standing-wave retio (SWR), small size, long term stable working, e.g. when used ni CDMA, the SWR of input voltage <1.3, the output SWR<2.5, noise coefficient <0.3 dB, and long period working under 72K. |
Claim： |
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Priority： |
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PCT： |
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