Doping semiconductor/insulator/semiconductor material having current controlled resistance effect |
Title： |
| Doping semiconductor/insulator/semiconductor material having current controlled resistance effect |
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Application Number： |
200310117195 |
Application Date： |
2003/12/05 |
Announcement Date： |
2004/11/17 |
Pub. Date： |
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Publication Number： |
1547220 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01C 7/13 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Zhang Xiaozhong, Xue Qingzhong, Zhang Lina |
Key Words： |
doping semiconductor, insulator, semiconductor material, current, resistance |
Abstract： |
The invention discloses a kind of semiconductor/insulator/semiconductor material which belongs to electricity sensor material, and which has an effect of 'current controls resistance' produced with PLD method. Based on the Si (100) base plate, the target material is cooling pressed with metal-black lead compound material with different proportion, and then it is deposited with PLD method in a definite temperature. The material has a large Eigen polarization in condition without outer electric field, the polarization is 0.0027 V, and new sensors can be designed with the characters. The product is an electricity sensor material which has a wide prospect. |
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 Relevancy information |
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| Last Update |
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2008-4-17 |
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Selected patents owned by Tsinghua University filed in 2005 are loaded. |
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2008-3-31 |
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Selected patents owned by Tsinghua University filed in 2006 and 2007 are load. |
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