Method of depositing big grain polycrystalline silicon thin film on ceramic substrate |
Title： |
| Method of depositing big grain polycrystalline silicon thin film on ceramic substrate |
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Application Number： |
200310117094 |
Application Date： |
2003/12/09 |
Announcement Date： |
2004/11/17 |
Pub. Date： |
2006/10/11 |
Publication Number： |
1546740 |
Announcement Number： |
1279221 |
Grant Date： |
2006-10-11 |
Granted Pub. Date： |
2006-10-11 |
ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
C30B 25/00C23C 16/24H01L 21/365 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Huang Yong, Li Haifeng, Zhang Houxing |
Key Words： |
deposit, polycrystalline silicon, thin film, ceramic substrate |
Abstract： |
The present invention belongs to the technology field of solar battery elements manufacture, in particular relates to a method of depositing big grain polycrystalline silicon thin film on ceramic substrate which comprises, disintegrating the single-crystal silicon into particles, planting seed crystal of a finite density on the ceramic substrate surface, and preparing big grain polycrystalline silicon thin films through RTCVD deposition technique. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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