One-dimensional nanometer semiconductor structure based photoelectric sensor and its manufacturing method |
Title： |
| One-dimensional nanometer semiconductor structure based photoelectric sensor and its manufacturing method |
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Application Number： |
200610000995 |
Application Date： |
2006/01/13 |
Announcement Date： |
2006/07/19 |
Pub. Date： |
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Publication Number： |
1805156 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 31/09, H01L 31/18 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Zhou Zhaoying, Zhu Rong, Wang Dingqu, Ye Xiongying |
Key Words： |
One-dimensional nanometer semiconductor structure, photoelectric sensor, manufacturing method |
Abstract： |
The invention relates to a photoelectric sensor based on one-dimensional semi-conductor nanometer structure and relative preparation method, which comprises, a single-crystal silicone base the silicon oxide layer via hot oxygenation method formed by on the surface of single-crystal silicon base and a silicon nitride layer via the low-pressure chemical vapor deposition or plasma strengthen chemical vapor deposition deposited on the surface of silicon oxide layer. Wherein, the silicon oxide layer and the silicon nitride layer can form an insulation layer. And the invention also comprises the comb electrode couple formed by the first comb electrode and the second comb electrode prepared on the surface of insulation layer via the photo-etching/ion-etching method the multi-tooth end of said electrode couple are oppositely arranged between which a one-dimensional semi-conductor nanometer structure is arranged. The invention has the advantages that: the preparation of micro electrode couple is standard micro processing technology which is simple the one-dimensional semi-conductor nanometer structure is small, with large surface/volume rate and high photoelectric efficiency, while using simple electrophoresis integration to realize batch production. Said photoelectric sensor has small size, high sensitivity and the application for photo detection and light switch. |
Claim： |
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