Method for preparing high curie point piezoelectric using water base sol-gel method
Title:
Method for preparing high curie point piezoelectric using water base sol-gel method
Application Number:
200610058722
Application Date:
2006/03/03
Announcement Date:
2006/08/23
Pub. Date:
2007/12/19
Publication Number:
1821172
Announcement Number:
100355697
Grant Date:
2007-12-19
Granted Pub. Date:
2007-12-19
ApplicationType:
Invention
State/Country:
11[China|beijing]
IPC:
C04B 35/462, C04B 35/624, H01L 41/187
Applicant(s):
Tsinghua Univ.
Inventor(s):
Wang Xiaohui, Wen Hai, Li Longtu, Gui Zhilun
Key Words:
high curie point piezoelectric, water base sol-gel method
Abstract:
The present invention belongs to the field of piezoelectric film material preparing technology, and is water base sol-gel process of preparing high Curie point piezoelectric film. Tetrabutyl titanate and nitrate and acetate of other metal cation as main material and glacial acetic acid and deionized water as main solvent are first prepared into stable sol and the sol is coated and fast annealed to form the piezoelectric film with compact structure and homogeneous components. The piezoelectric film has excellent piezoelectric performance, Curie point as high as 435 deg.c, crystal grain size of 20-100 nm, effective piezoelectric coefficient d33*of about 80 pC/N, comparable with that of the PZT film, and thickness controllable in 0.15-1 micron. The piezoelectric film is suitable for various piezoelectric ferrite elements and devices used in high temperature, and may find wide application in space, automobile and other industrial fields.
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