Method of mfg. GaN-base LED |
Title： |
| Method of mfg. GaN-base LED |
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Application Number： |
200410009003 |
Application Date： |
2004/04/05 |
Announcement Date： |
2005/01/12 |
Pub. Date： |
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Publication Number： |
1564331 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 33/00 |
Applicant(s)： |
Tsinghua |
Inventor(s)： |
Luo Yi, Han Yanjun, Shentu Weijin |
Key Words： |
mfg. method, GaN-base, LED |
Abstract： |
Zone of luminosity in tube core is divided into more than two zones in smaller size through etching deep trough in order to raise luminous efficiency, thermal stability and service life of device. Or, using reverse welding technique welds tube core onto heat sink material with higher thermal conductivity and using laser lift-off technology peels off substrate material. Thermal strain between epitaxial layer and substrate material or between epitaxial layer and heat sink material caused by unmatched coefficients of thermal expansion is controlled in very low level in the invention. The invention raises luminous efficiency, thermal stability and service life of device, and does not generate unfavorable influence on characteristic of GaN substrate material. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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