Hole resonance tunnel-through diode based on Si/SiGe
Title：
Hole resonance tunnel-through diode based on Si/SiGe
Application Number：
 200410006243
Application Date：
 2004/03/17
Announcement Date：
 2005/01/12
Pub. Date：
 2007/04/04
Publication Number：
 1564325
Announcement Number：
 1309094
Grant Date：
 2007-4-4
Granted Pub. Date：
 2007-4-4
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 29/88
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Chen Peiyi, Xiong Chenrong, Deng Ning
Key Words：
 Hole, resonance tunnel-through, diode, Si/SiGe
Abstract：
 Strain SiGe layer is as cavity quantum trap, and Si is as cavity potential barrier so as to form structure of dual potential barrier single quantum trap. Undoping SiGe, Si, SiGe, Si, SiGe layers and heavy doping P type Si layer are deposited on high doping P type Si substrate by using chemical vapor deposition or molecular beam epitaxy method so as to form the platform structure. Poles are formed on substrate and the platform. Obvious differential negative resistance phenomena are observed in testing of current voltage characteristic. The invention raises integrity and is compatible to technique in mainstream.
Claim：
Priority：
PCT：
LegalStatus：

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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
2008-3-31
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