Superhigh vacuum chemical vapor deposition epitoxy system with rotary lining
Title:
Superhigh vacuum chemical vapor deposition epitoxy system with rotary lining
Application Number:
200510086476
Application Date:
2005/09/23
Announcement Date:
2006/03/01
Pub. Date:
Publication Number:
1740384
Announcement Number:
Grant Date:
Granted Pub. Date:
ApplicationType:
Invention
State/Country:
11[China|beijing]
IPC:
C23C 16/00
Applicant(s):
Tsinghua Univ.
Inventor(s):
Qian Peixin, Liu Ronghua, Lin Huiwang, Liu Zhihong, Chen Changchun, Zhang Wei
Key Words:
Superhigh vacuum, chemical vapor deposition, epitoxy system, rotary lining
Abstract:
The present invention belongs to the field of integrated circuit semiconductor film epitaxy growth technology and super lattice film material growth technology. The present invention features that inside the quartz reaction cavity inside the epitaxial growth chamber, there is one liner horizontally set rotating mechanism comprising motor as the rotation power source, sealed magnetic torsional force conveying assembly connected to the motor, quartz glass rod with thread, quartz ring meshed with the rod, several epitaxial growth liner supporting quartz columns fixed onto the quartz ring, quartz retaining block with balls to support the quartz ring, and quartz glass plate to fix the quartz retaining block. Owing to the rotating mechanism, the present invention has greatly raise film inner resistance of the epitaxial liner and thickness homogeneity.
Claim:
Priority:
PCT:
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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
2008-3-31
  Selected patents owned by Tsinghua University filed in 2006 and 2007 are load.







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