Production of high-purity titanium silicon carbon ceramic powder under vacuum state
Title:
Production of high-purity titanium silicon carbon ceramic powder under vacuum state
Application Number:
200510086689
Application Date:
2005/10/21
Announcement Date:
2006/05/31
Pub. Date:
Publication Number:
1778767
Announcement Number:
Grant Date:
Granted Pub. Date:
ApplicationType:
Invention
State/Country:
11[China|beijing]
IPC:
C04B 35/515, C04B 35/56, C04B 35/626
Applicant(s):
Tsinghua Univ.
Inventor(s):
Pan Wei, Han Ruobing
Key Words:
Production, high-purity, titanium silicon carbon, ceramic powder, vacuum state
Abstract:
Production of high-purity Ti3SiC2 ceramic powder under vacuum state is characterized by taking TiC powder, Ti powder and Si powder as materials, furnishing with mol proportion TiC:Ti:Si=2: (1:¡«1.3): (1.1¡«1.5), ball milling, mixing, drying, mesh screening, putting into alumina crucible, placing it into vacuum reacting furnace, pre-pumping vacuum to 5¡«20Pa, raising temperature to 1300¡«1400¡ãC at speed <=50¡ãC/cm, keeping temperature at 1300¡«1400¡ãC under vacuum environment for 1¡«2 hrs, cooling to room temperature to obtain Ti3SiC2 ceramic powder with content>97%. It is simple and cheap, has high purity and used for scale industrial production.
Claim:
Priority:
PCT:
LegalStatus:

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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
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