High-frequency thyratron transistor
Title：
High-frequency thyratron transistor
Application Number：
 200510086992
Application Date：
 2005/11/25
Announcement Date：
 2006/05/03
Pub. Date：
Publication Number：
 1767206
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 29/74
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Zhou Weisong, Wang Peiqing, Zhi Daqi, Wang Junping, Zhang Bin
Key Words：
 High-frequency, thyratron transistor
Abstract：
 The invention relates to a high-frequency thyrode in the field of power switch component technology. It comprises: a silicon sheet, a gate electrode evaporated on the silicon sheet, an amplifying gate electrode and a negative electrode, wherein the amplifying gate electrode adopts distribution structure which is divided into four parts, each part is formed by an amplifying gate electrode main rode and three arc branches; the distance of each part and the same part branch are designed by the current expending speed with the range 3.5¡«5mm.
Claim：
Priority：
PCT：
LegalStatus：

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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
2008-3-31
  Selected patents owned by Tsinghua University filed in 2006 and 2007 are load.







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