Stress sensor chip based on SOI |
Title： |
| Stress sensor chip based on SOI |
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Application Number： |
200510117116 |
Application Date： |
2005/11/01 |
Announcement Date： |
2006/04/05 |
Pub. Date： |
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Publication Number： |
1755946 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 29/84, H01L 21/66, G01L 1/18 |
Applicant(s)： |
Tsinghua University |
Inventor(s)： |
Wang Zheyao, Tian Kuo, Pan Liyang, Hu Chaohong, Wang Jianfeng, Liu Litian |
Key Words： |
Stress sensor, chip, SOI |
Abstract： |
The invention discloses a stress sensor chip based on the silicon of insulator, belonging to the high temperature measurement, and the manufacturing, packaging and measurement technique of integrate circuit. Wherein, the invention makes a silicon oxide insulating barrier on the silicon substrate and makes a stress sensing element layer on the silicon oxide insulating barrier. The advantages of The invention comprises that the sensor chip can measure the stresses of total six directions, and the stress sensor made from SOI substrate avoids the reverse bias PN junction as insulating barrier for keeping insulating ability in high temperature, therefore, it can confirm the operation reliability of sensor chip that it can operate in the high temperature of 600 Deg. C. In addition, the stress sensor chip made from SOI formed by two monocrystalline silicon in different crystallographic direction can realize the stress condition of real integrate circuit chip and accurately measure the total six stress components that the chip bears, when it replaces the circuit tube core to operate the stress measurement. |
Claim： |
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Priority： |
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PCT： |
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