Multi-sectional-distribution feedback semiconductor laser
Title:
Multi-sectional-distribution feedback semiconductor laser
Application Number:
200510089216
Application Date:
2005/07/27
Announcement Date:
2005/12/21
Pub. Date:
2007/08/22
Publication Number:
1710761
Announcement Number:
1333500
Grant Date:
2007-8-22
Granted Pub. Date:
2007-8-22
ApplicationType:
Invention
State/Country:
11[China|beijing]
IPC:
H01S 5/12, H01S 5/00
Applicant(s):
Tsinghua Univ.
Inventor(s):
Luo Yi, Sun Changzheng, Wan Qin, Wang Jian, Xiong Bing
Key Words:
Multi-sectional-distribution, feedback, semiconductor laser
Abstract:
Characters of the invention are that wave-guide width in at least one DFB sect in multiple DFB sects is different from width in other sects. Wavelength of DFB laser is correlative to cycle of grating and equivalent refractive index. Different wave-guide widths are adopted for different DFB sects so as to obtain difference of equivalent refractive index. Therefore, difference of laser wavelength is realized. Corresponding laser spectrum generates minor difference (in 0.0lnm level) so as to reach effect of wavelength shift. The invention can be applicable to repair grating structure to play role of optimizing performance of device. Advantages are: novel structure, simple preparation technique. The invention possesses wide application prospects in future high-speed communication area.
Claim:
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PCT:
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