Bias compensation circuit for adjusting transconductance variation range of transistor in load
Title:
Bias compensation circuit for adjusting transconductance variation range of transistor in load
Application Number:
200510011357
Application Date:
2005/02/25
Announcement Date:
2005/08/17
Pub. Date:
Publication Number:
1655086
Announcement Number:
Grant Date:
Granted Pub. Date:
ApplicationType:
Invention
State/Country:
11[China|beijing]
IPC:
G05F 3/24, G05F 3/26, H03B 5/08
Applicant(s):
Tsinghua University
Inventor(s):
Mao Xiaojian, Yang Huazhong, Wang Hui
Key Words:
adjusting, load, transistor, transconductance variation range, bias compensation circuit
Abstract:
A current mirror regulating trans-conductance variable sphere in load characterizes that its bias current source output end is parallel to a NMOS transistor to the earth, the grid of the transistor is connected with the central point of a resistor bleeder branch to make up of a bias compensation circuit, which can reduce the trans-conductance variance by 41.4% compared to NMOS transistors without said compensation in a LC oscillator.
Claim:
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PCT:
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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
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