Non-volatile memory part for multi-digit storage and its making method
Title：
Non-volatile memory part for multi-digit storage and its making method
Application Number：
 200710118558
Application Date：
 2007/07/10
Announcement Date：
 2008/01/09
Pub. Date：
Publication Number：
 101101926
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 29/792H01L 27/115H01L 21/336H01L 21/8247
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Pan Liyang, Gu Haiming
Key Words：
 Non-volatile, memory part, multi-digit storage, making method
Abstract：
 The invention is concerned with the multi-storing non-volatilization memorizer applies forming the asymmetry channel by doping the impurity and it's making method. It belongs to the domanial of semiconductor device. It includes the p trap with the asymmetry channel on the bottom of the model p semiconductor; where have the tunneling silicon dioxide layer, the silicon nitride layer, and the silicon dioxide composed complex medium layer, the polycrystal controlling bar on the complex medium layer and also can form the bar structure with it, orderly; the car structure consists of the first edge with the source electrode underlying and the second edge with the drain electrode underlying. The bar structure enforces the location read-in operation by activating the tunneling heat hole injection; and through the controlling bar to the underlying F-N tunneling electron enforces the erasing operation. The memorizer can be apply to the electric charge seize memorizer, the multi-digit memorizer, and the non-volatilization semiconductor memorizer.
Claim：
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2008-4-17
  Selected patents owned by Tsinghua University filed in 2005 are loaded.
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