Method for preparing foil of cathode with high specific volume |
Title： |
| Method for preparing foil of cathode with high specific volume |
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Application Number： |
200610156891 |
Application Date： |
2006/11/17 |
Announcement Date： |
2007/12/26 |
Pub. Date： |
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Publication Number： |
101093751 |
Announcement Number： |
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Grant Date： |
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Granted Pub. Date： |
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ApplicationType： |
Invention |
State/Country： |
94[China|shenzhen] |
IPC： |
H01G 9/055, H01G 13/00, C25D 11/04, C23C 14/35, C25D 11/16 |
Applicant(s)： |
Shenzhen Tsinghua Univ. Academy |
Inventor(s)： |
Xu Yongjin, Liao Zhenhua, Chen Jianjun, Liu Weiqiang |
Key Words： |
high specific volume, cathode foil, preparing method |
Abstract： |
Characters of the preparation method are that raw foil is selected as basis material; formation process on surface is adopted so as to form a layer of compact, even, alumina layer (AL) with unilateral conductivity on surface of aluminum foil (AF); then forming a layer of titanium (Ti) film on surface of AF by using magnetron sputtering (MS) method; after process of coating by vaporization on surface of AF, high temperature processing is carried on Ti so as to form a passive film. Since anodic oxidation is carried out in advance, thus, stable AL is contacted to coated metal directly. AL has no influence on adhesive force of the metal. Carbonization is carried out in air. Impedance and capacity are not affected on product so as to simplify difficulty for preparing solid capacitor with high specific volume. In MS process, adjusting concentration of nitrogen gas makes Ti on surface of AF gradient descent, and Ti nitride gradient ascent so as to raise stability of sputtered layer. |
Claim： |
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Priority： |
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PCT： |
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