CMOS level shift trigger of conditional discharge and differential I/O
Title：
CMOS level shift trigger of conditional discharge and differential I/O
Application Number：
 200610114286
Application Date：
 2006/11/03
Announcement Date：
 2007/04/25
Pub. Date：
Publication Number：
 1953327
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H03K 3/012, H03K 3/356
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Lin Saihua, Yang Huazhong, Qiao Fei, Wang Hui
Key Words：
 conditional discharge, differential I/O, CMOS, trigger
Abstract：
 The invention relates to a CMOS voltage convert trigger. Wherein, it is characterized in that it comprises discharge/charge circuit, condition switch, clock window circuit, charging circuit of differential input and forming circuit of clock impulse; two symmetry condition switches control the cross discharge/charge circuit; two symmetry holding circuits hold the states of relative internal nodes; the clock window circuit allows the circuit to open trigger at the instant of ascending clock, and close trigger when the clock signal is high, to avoid error turnover caused in changed input signal in the stable period; and since it uses condition switch, it can eliminate internal abundant turnover, to reduce power consumption and realize the conversation from low to high voltage.
Claim：
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PCT：
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