CMOS level shift semi-dynamic trigger of conditional discharge and pulse drive
Title：
CMOS level shift semi-dynamic trigger of conditional discharge and pulse drive
Application Number：
 200610114284
Application Date：
 2006/11/03
Announcement Date：
 2007/04/25
Pub. Date：
Publication Number：
 1953325
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H03K 3/012, H03K 3/356
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Lin Saihua, Yang Huazhong, Wang Hui
Key Words：
 conditional discharge, pulse drive, CMOS, trigger
Abstract：
 The invention relates to a trigger used in CMOS voltage conversion. Wherein, it is characterized in that said trigger contains condition switch, condition discharge circuit, holding circuit, data latch circuit, time impulse circuit, and state signal output circuit; the condition switch based on output feedback signal and input data signal controls the discharge of internal node charge, to eliminate abundant turnover; the data latch circuit via state feedback controls the condition of charge and discharge, and latch data; the time impulse circuit controls the trigger to be opened at the ascending edge of time, to eliminate error turnover caused by data change at high voltage period; therefore, the invention has low power consumption and low leakage current.
Claim：
Priority：
PCT：
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