Wide stress area silicon pressure sensor
Title：
Wide stress area silicon pressure sensor
Application Number：
 200710064141
Application Date：
 2007/03/02
Announcement Date：
 2007/09/12
Pub. Date：
Publication Number：
 101034021
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 G01L 1/18
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Liu Litian, Lin Huiwang, Zhang Zhaohua, Ren Tianling
Key Words：
 Wide stress area, silicon, pressure sensor
Abstract：
 This invention belongs to semiconductor pressure sensor technosphere. The sensor includes pressure-sensing film that stressed zone stretched and supporting part around it. voltage dependent resistance lay in high-stress area that cross over pressure-sensing film, compose Wheatstone bridge, to convert pressure change to electrical signal; broken number of the described voltage dependent resistance perpendicular to pressure-sensing film's bound is greater than that parallel to pressure-sensing film bound, to meet shape of high stress region; resistance strip width of turnover section is greater than normal resistance strip width; processing ion implantation of high concentration at the same time to wane ohmic value of turnover section; the pressure-sensing film thickness-width ratio as far as possible large, to satisfy require of bound's high stress region width. The invention is at the condition of chip area reducing but line not reducing, utilize membrane outer region of high stress to increase stressed zone area, to advance sensor sensitivity and reduce numbers of rejects.
Claim：
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PCT：
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