LED epitaxial wafer electroluminescent nondestructive detection method |
Title： |
| LED epitaxial wafer electroluminescent nondestructive detection method |
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Application Number： |
02123646 |
Application Date： |
2002/07/05 |
Announcement Date： |
2003/02/05 |
Pub. Date： |
2008/09/10 |
Publication Number： |
1395305 |
Announcement Number： |
100418203 |
Grant Date： |
2008-9-10 |
Granted Pub. Date： |
2008-9-10 |
ApplicationType： |
Invention |
State/Country： |
11[China|beijing] |
IPC： |
H01L 21/66, G01R 31/26 |
Applicant(s)： |
Tsinghua Univ. |
Inventor(s)： |
Han Li, Dong Zhanmin, Su Zhe |
Key Words： |
LED, epitaxial wafer, electroluminescent, nondestructive detection method |
Abstract： |
The invented method for testing the pitaxial wafer of the light emitting diode (LED) belongs to the area of the test instrument. The positive and negative electrodes are set upon the surface of the epitaxial wafer of LED. The high-voltage constant current source is connected to the positive and negative electrode, making the p type layer and the n type layer in the epitaxial wafer of LED form the backward diode. The breakdown of the backward diode caused by the high-voltage makes the entire circuit turn on so as to trigger off the luminescence of the luminous layer of the epitaxial wafer of LED. Thus, the target of the test is reached. The method is direct, safe and convenient. Moreover, the electric parameters such as the forward direction on-state voltage, the reverse-leakage current can be obtained if it is photo fluorescence. |
Claim： |
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Priority： |
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PCT： |
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LegalStatus： |
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