Large capacity insulation grating bipolar transistor driving circuit
Title：
Large capacity insulation grating bipolar transistor driving circuit
Application Number：
 02129368
Application Date：
 2002/09/06
Announcement Date：
 2003/03/12
Pub. Date：
Publication Number：
 1402431
Announcement Number：
 1190010
Grant Date：
 2005-2-16
Granted Pub. Date：
 2005-2-16
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H03K 17/795
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Qu Wenlong
Key Words：
 Large capacity, insulation grating, bipolar transistor, driving circuit
Abstract：
 The characteristic of the drive circuit of the large capacity insulated gate bipolar transistor (IGBT) is that the power amplifier stage is composed of the lowr voltage MOS tubes (T4, T5). The said drive circuit also includes the shaping circuit (1), the resistor (R3), the shaping circuit (2) and the level converting circuit. The one end of the photoelectricity isolation statge is connected to the shaping circuit (1), the resistor (R3) and the grid of the MOS tube (T4) in sequence. The other end is connected to the shaping circuit (2), the level converting circuit (30) and the grid of the MOS tube (T5) in sequence. The invented drive circuit can drive large capacity IGBT and adjust the time to turn on and the duration of IGBT so as to realize the on/off state at optimal time.
Claim：
Priority：
PCT：
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