Surface modifying method for producing high temperature super conductive device
Title：
Surface modifying method for producing high temperature super conductive device
Application Number：
 02159935
Application Date：
 2002/12/30
Announcement Date：
 2004/07/14
Pub. Date：
Publication Number：
 1512602
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 39/24
Applicant(s)：
 Tsinghua Univ.
Inventor(s)：
 Han Zhenghe, Wang Sansheng, Wu Kai
Key Words：
 Surface modifying method, high temperature super conductive device
Abstract：
 A surface modified method for a high temperature superconducting device characterizes that the energy of the energy carrying grain beam is 5-50000eV or 5-10000eV, and incident angle is 5-85deg. In order to get the necessary performance, annealing to the sample after bombardment is needed under 100-1500deg.C. This invention increases the smoothness of the processed material surface, reduces fault and improves the organization structure so as to increase the superconduction performance of the entire device. The bombarded material includes the basis, transition layer, super conduction layer and their any combinations in the process.
Claim：
Priority：
PCT：
LegalStatus：

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