Abstract： |
The invention relates to a technique field utilized to produce semiconductor device and integrated circuit. It includes technique as follows: (1) preparing wafer, cleaning, heating oxidation, and depositing barrier layer of silicon nitride, (2) first time of photo etching, etching barrier layer of silicon nitride, porous silicon formed by anodizing, removing silicon dioxide and silicon nitride, and depositing support film of silicon dioxide, densifying, sputtering aluminium on insulation film, (3) second time of photo etching, forming aluminium line on lower layer by corroding aluminium, depositing insulating layer, (4) third time of photo etching, corroding insulating layer of silicon nitride, sputtering aluminum on insulatino film as upper layer of metal, (5) the fourth time of photo etching, forming the aluminum line by corroding aluminium, alloying, and (6) fifth time of photo etching, forming released holes to release porous silicon, cleaning and drying. The invented method can be utilized to produce MEMS inductance with suspension structure as well as filter and oscillator with similar suspension structure. it is expected to find wide used since the technique that is totally compatible to CMOS increases the integrated level of system greatly and reduces cost of system. |
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