Polycrystal collecting area invert structure SiGe hetero-junction transistor
Title：
Polycrystal collecting area invert structure SiGe hetero-junction transistor
Application Number：
 200710177246
Application Date：
 2007/11/13
Announcement Date：
 2008/04/16
Pub. Date：
Publication Number：
 101162730
Announcement Number：
Grant Date：
Granted Pub. Date：
ApplicationType：
 Invention
State/Country：
 11[China|beijing]
IPC：
 H01L 29/737, H01L 21/331
Applicant(s)：
 Tsinghua University
Inventor(s)：
 Yan Liren, Liu Zhihong, Zhou Wei
Key Words：
 Polycrystal collecting area, invert structure, SiGe, hetero-junction transistor
Abstract：
 The invention discloses a SiGe hetero junction transistor with polycrystal collecting region inverted structure, belonging to the semiconductor device structure and fabrication technology field. After avoiding a buried layer and an N- epitaxy Si layer structure in general SiGe HBT transistor, an underlay N+ layer is directly taken as an emitting area, and then a SiGe epitaxy base region, a polycrystal Si collecting area and an electronic device structure consisting of an emitter, a base electrode and a collector are in turn made. The collecting region is positioned on the upper layer of the structure, which contributes to adopting ion injecting technique to adjust the position of B-C junction, thereby well guaranteeing the performance of device. An outside base region and the down-lead of base electrode adopt a dielectric layer to separate from the lower emitting area, which reduces capacitance and guarantees the working speed of device. The transistor with the inverted structure is suitable for forming SiGe microwave monolithic integrated circuit in a form of common emitter.
Claim：
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PCT：
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